基于分子动力学的压力对纳米抛光碳化硅的影响分析

Effect of pressure on nano-polishing silicon carbide based on molecular dynamics

本文运用分子动力学基本原理建立了金刚石磨粒抛光碳化硅工件的三维模拟模型,对线性增大抛光压力时系统势能、碳化硅工件的温度与材料去除量的变化规律进行了深入分析。研究结果表明:随着抛光压力的线性增加,系统势能和工件温度首先明显增大,然后增速变得缓慢,最后趋于动态平衡的状态,工件表面的材料去除形式由压实去除转变为犁沟去除,直至大变形切削过程,工件表面的原子去除数量近似指数函数变化。

In this paper,the basic principles of molecular dynamics have been used to establish a three-dimensional simulation model of diamond abrasive polishing silicon carbide workpiece.Based on this model,the change regulation of potential energy of the system,temperature of silicon carbide workpiece and material removal during the linear increase of polishing pressure is systematically analyzed.The results show that the potential energy of the system and the temperature of the workpiece first increase significantly with the linear increase of polishing pressure.Then the growth rate becomes slow,and finally tends to a dynamic equilibrium state.The material removal form of the workpiece surface is changed from adsorption to furrow removal,until the large deformation cutting process,meanwhile the amount of atom removal on the workpiece surface changes approximately exponentially.