碲锌镉光子计数探测器的制备及性能的研究

Fabrication and Properties of CdZnTe Photon Counting Detector

研究移动加热器法THM生长的碲锌镉室温半导体用于光子计数探测器的可行性。它要求探测器具有较低的漏电流、较高的光子计数率。在探测器的研制过程中,发现晶体退火能在原有探测器特性的基础上能进一步提高碲锌镉探测器的性能,使探测器达到漏电流能小于0.1 nA,光子计数率达到1.5 Mc/s,可应用于光子计数及能谱CT等应用场合。

In this paper,the feasibility of THM grown CdZnTe room temperature semiconductor for photon counting detector is studied.It requires the detector to have low leakage current and high photon counting rate.During the development of the detector,it is found that the annealing of crystal can further improve the performance of CdZnTe detector on the basis of the original detector characteristics,so that the leakage current energy of the detector is less than 0.1 nA and the photon counting rate reaches 1.5 Mc/s.It can be used in photon counting and energy spectrum CT applications.