Si和SiC功率器件结温提取技术现状及展望

Junction Temperature Extraction Methods for Si and SiC Power Devices——a Review and Possible Alternatives

对功率半导体器件结温的在线准确提取是实现器件智能控制、性能评估、主动热管理、健康状态评估及优化器件寿命等的重要基础。本文梳理了现有基于温敏参数的Si(硅)和SiC(碳化硅)功率器件结温提取方法的机理和主要特点,从灵敏度、测量频率、侵入性和线性度等指标对已有方法进行了性能评估。在此基础上,结合SiC JFET(结型场效应晶体管)器件的温度特性,提出一种新颖的基于栅-源极间寄生PN结击穿电压的SiC JFET器件非侵入性在线结温提取方法,仿真结果证明了所提出方法的正确性和有效性。

Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control,performance evaluation,active thermal management,health assessment and device lifetime optimization.The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices.Furthermore,these methods were evaluated and compared from the criteria of sensitivity,measuring frequency,virulence and linearity.Then,together with the investigation of temperature characteristics of SiC JFET devices,a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices.The simulation results verified the correctness and effectiveness of the proposed method.