摘要
采用中心波长780nm、线宽0.13nm的体布拉格光栅外腔半导体激光作为基频光,基于Ⅰ类相位匹配的三硼酸锂晶体(LBO),获得了中心波长为390nm的倍频光输出,输出功率30μW,转换效率0.01%,为高功率紫外光束的实现提供了新的技术路线。
A 780 nm continuous-wave,which is output by extra-cavity semiconductor laser with a bulk bragg grating,is used as the fundamental input light source of the Second Harmonic Generation (SHG) system.Line width of the fundamental light is 0.13 nm.Based on the type I phase-matching and Lithium Triborate (LBO) crystal,390 nm second harmonic is obtained.The emitted average output power is 30 μW (SHG efficiency is 0.01%).We provide a new technical route for the achievement of high-power UV beams.
作者
胡列懋
李志永
刘松阳
宁方晋
谭荣清
Hu Liemao;Li Zhiyong;Liu Songyang;Ning Fangjin;Tan Rongqing(Department of High Power Gas Laser,Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,China;School of Electronic,Electronical and Communication Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2019年第2期1-2,共2页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(61875198)
军委装备发展部领域基金项目(61404140107)
关键词
半导体激光器
倍频
紫外光
高功率
laser diode
second harmonic generation
ultraviolet light laser
high power
