磁控溅射工艺参数对碳膜表面形貌及浸润性的影响

Effect of Magnetron Sputtering Process Parameters on Surface Morphology and Wettability of Carbon Film

为了分析磁控溅射工艺对碳膜表面形貌及浸润性的影响,在室温下采用磁控溅射技术在硅片表面沉积碳膜,并利用原子力显微镜(AFM)、扫描电镜(SEM)、静态接触角测量仪对所得碳膜进行表征。结果表明:随着溅射功率的提高,碳膜表面粗糙度先减小后增大,致密性逐渐改善,静态接触角先增大后减小;随着溅射时间的延长,碳膜的表面粗糙度逐渐增加,均匀性在一定的溅射时间内逐渐改善,静态接触角呈现先减小后增大再减小的趋势;随着溅射压强的增加,碳膜表面粗糙度先增大后减小,致密性在过高的溅射压强下会变差,静态接触角先减小后增大。

In order to analyze the effect of magnetron sputtering process on the surface morphology and wettability of carbon film, a carbon film was deposited on the surface of silicon wafer by magnetron sputtering at room temperature, and the resulting carbon film was characterized by the atomic force microscope, scanning electron microscope and a measuring instrument of static contact angle. The results show that with the increase of sputtering power, the surface roughness of carbon film decreases first and then increases, the compactness gradually improves, and the static contact angle increases first and then decreases. With the prolongation of sputtering time, the surface roughness of carbon film increases gradually, the uniformity gradually improves in a certain sputtering time, and the static contact angle first decreases, then increases and finally decreases. With the increase of sputtering pressure, the surface roughness of the carbon film first increases and then decreases, the compactness becomes worse at the high sputtering pressure, and the static contact angle decreases first and then increases.