摘要
采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.
The In0.5Ga0.5As/GaAs quantum dots(QDs)were prepared by the technique of molecular beam epitaxy(MBE),Scanning tunneling microscope(STM)was used to characterize the samples grown at different growth temperatures.The results show that the densities of the In0.5Ga0.5As/GaAs QDs increase first and then decrease,and the sizes increase with the increase of temperature.Besides,this work demonstrates that the growth mode of QDs is affected by curing mechanism of Ostwald.The energy needed for the size increase is provided by strain energy and temperature,however,the growth of QDs is limited by the desorption of surface adatoms at high temperature.
作者
马明明
杨晓珊
郭祥
王一
汤佳伟
张之桓
许筱晓
丁召
MA Ming-Ming;YANG Xiao-Shan;GUO Xiang;WANG Yi;TANG Jia-Wei;ZHANG Zhi-Huan;XU Xiao-Xiao;DING Zhao(Key Laboratory of Micro-Nano-Electronics and Software Technology of Guizhou Province,College of Big Data and Information Engineering,Guizhou University,Guiyang,550025,China)
出处
《原子与分子物理学报》
CAS
北大核心
2019年第1期103-108,共6页
Journal of Atomic and Molecular Physics
基金
国家自然科学基金(61564002
11664005
61604046)
贵州省科学技术基金(黔科合J字[2014]2046号
黔科合LH字[2016]7436号)
贵州省教育厅自然科学基金(黔教合KY字(2014)265号)
