摘要
由于离子掺杂可有效改善ZnS薄膜的特性,故本研究以溶胶-凝胶法制备Ni_xZn_(1-x)S薄膜(x=0.00, 0.05, 0.10, 0.15),并利用XRD、PL光谱及磁性测试仪分析Ni掺杂对其磁性的影响.研究结果表明Ni掺杂量x为0.00、0.05、0.10及0.15时薄膜的饱和磁化强度随分别为6.59×10^(-6) emu/cm^3、4.61×10^(-6) emu/cm^3、3.88×10^(-6) emu/cm^3及3.52×10^(-6) emu/cm^3,即饱和磁化强度随x增加而减小. PL分析表明缺陷发光强度随x增加而减弱,能隙发光强度则随之增强,结合束缚极化子理论便知饱和磁化强度会随x增加而减小. XRD分析表示结晶品质随x增加而变好,说明薄膜中的缺陷数量会随x增加而减少,使得磁信号无法通过缺陷方式传导而导致其磁性减弱.
Ion doping can effectively improve the properties of ZnS films and then the NixZn1-x S films(x=0.00,0.05,0.10,0.15)were prepared by sol-gel method.The effects of Ni doping on magnetic property of the films were analyzed by XRD,PL spectra and magnetic tester.The results showed that the saturation magnetizations of the films are 6.59×10^-6 emu/cm^3,4.61×10^-6 emu/cm^3,3.88×10^-6 emu/cm^3 and 3.52×10^-6 emu/cm^3,respectively when Ni doping amounts x are 0.00,0.05,0.10 and 0.15.That is to say,the saturation magnetization decreases with x increasing.PL analysis showed that the luminous intensity of defects decreases and hence the energy gap luminescence intensity increases with the increase of x.Combined with the bound polaron theory,the saturation magnetization will decrease with the increase of x.XRD analysis showed that the crystal quality is better with x increasing,indicating that the number of defects in the films will decrease with the increase of x,so that the magnetic signal cannot be conducted through the defect mode,resulting in the magnetic weakening.
作者
薛红艳
XUE Hong-Yan(Department of Mechanical and Electrical Engineering,Yongcheng Vocational College,Yongcheng 476600,China)
出处
《原子与分子物理学报》
CAS
北大核心
2019年第1期134-137,共4页
Journal of Atomic and Molecular Physics
基金
国家自然科学基金(No.61504029)