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有序介孔硅-壳聚糖修饰电极差分脉冲溶出伏安法测定锡(Ⅱ)含量 被引量:2

Determination of Sn(Ⅱ) on siliceous mesostructured modified glassy carbon electrode by differential pluse voltanmmetry technique
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摘要 实验利用介孔泡沫硅(MCF)具有较大孔径、大的比表面积、高吸附性能的特点,以壳聚糖为粘接剂,将MCF成功修饰到玻碳电极上,制备了MCF/Chit/GC电极。使用差分脉冲溶出伏安技术,研究了锡(Ⅱ)在该电极上的溶出伏安特性。实验结果表明:MCF的存在,改变了常规平面电极对锡离子检测不灵敏的状况。利用锡(Ⅱ)浓度与其峰电流之间的线性关系,以MCF/Chit/GC为工作电极,可实现浓度范围为6.25~43.75μmol/L的锡(Ⅱ)的测定。 In this study,the siliceous mesostructured was used for construction of modified glass carbon electrode because of its large pore size,large specific surface area and high adsorption performance and the resulting electrode was labeled as MCF/Chit/GC.Here,chitosan effected as the binder.Differential pluse voltanmmetry(DPV)technique was applied to study the eletrochemical response of Sn(Ⅱ)on the MCF/Chit/GC electrode.The experimental results showed that MCF/Chit/GC electrode has a good linear response of Sn(Ⅱ)in range of 6.25~43.75μmol/L.
作者 张玲 刘楠 矫淞霖 张谦 ZHANG Ling;LIU Nan;JIAO Songlin;ZHANG Qian(College of Chemistry and Chemical Engineering, Shenyang Normal University, Shenyang 110034, China;College of Chemistry, Liaoning University, Shenyang 110036, China)
出处 《沈阳师范大学学报(自然科学版)》 CAS 2018年第6期497-503,共7页 Journal of Shenyang Normal University:Natural Science Edition
基金 国家自然科学基金资助项目(21203126/B030607) 辽宁省重大科技平台开放课题
关键词 介孔泡沫硅 锡(Ⅱ)离子 差分脉冲溶出伏安法 修饰电极 siliceous mesostructured Sn(Ⅱ) differential pluse voltanmmetry(DPV) modified electrode
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