基于非制冷微测辐射热计的非晶硅锗薄膜电学特性研究

The electrical characterization study of amorphous silicon germanium based on un-cooled micro-bolometer

采用等离子体增强化学气相沉积方法(PECVD)制备了应用于微测辐射热计的非晶硅锗薄膜(a-Si_xGe_y),并研究了不同反应气体流量比GeH_4/SiH_4对薄膜电学性能参数(电阻温度系数TCR和电导率)的影响。研究结果表明,随着流量比GeH_4/SiH_4的增大,薄膜电阻温度系数降低,电导率则呈现上升趋势。所制备的薄膜表现出了高TCR值(约3.5%/K^(-1)),适中的电导率(1.47×10^(-3)(Ω·cm)^(-1))和优良的薄膜电阻均匀性(非均匀性<5%),在微测辐射热计热敏材料领域具有良好的应用前景。

An amorphous silicon germanium film(a-SixGey ) for micro-bolometer was prepared by plasma enhanced chemical vapor deposition(PECVD).The influence of GeH4 /SiH4 on the electrical properties of thin films(TCR and conductivity) was studied.The results show that with the increase of flow rate ratio GeH4 /SiH4 ,the TCR decreases and the conductivity increases.The films presented high TCR values of around 3.5%/K^-1 ,moderate conductivity value of 1.47×10^-3 (Ω·cm)^-1 and excellent resistance uniformity respectively at room temperature,which had favorable application prospect in heat-sensitive material of un-cooled micro-bolometer.