基于VO_2相变实现太赫兹波段宽带抗反射

Broad band antireflection in terahertz band based on vanadium dioxide phase transition

提出利用VO_2薄膜匹配空气-介质界面,基于温度诱导VO_2的绝缘体-金属相变,实现太赫兹波段的宽带抗反射,并对温度依赖的宽带抗反射进行系统讨论.这一研究结果具有普适性,既适用于光学器件界面间的抗反射研究,也可用于微波波段的抗反射设计.

By introducing a conducting thin film of VO2 into the interface between the air and fused silica substrate,we realize the broad band antireflection in a terahertz(THz) frequency band based on temperature-induced VO2 insulator-metal phase transition.At the same time,we also investigate the conductivity of the temperature induced VO2 film and its influence on the antireflection property with THz spectroscopy.The main results obtained in the study are universal,and are also applicable to the antireflection phenomena investigation on the interfaces between the optical devices and the antireflection design in the microwave band.