摘要
分析忆阻器的基本理论,推导忆阻器阻值与电量、时间的函数关系,使用Simulink建立忆阻器模型,并验证该模型在正弦信号激励下,电流和电压具有滞回特性.设计基于忆阻器的鉴相电路,将相位差测量转化成对脉冲宽度的测量,对方法进行理论分析,并通过仿真实验验证了电路的功能.通过仿真、计算,得到忆阻器在边界非线性效应的影响下,非线性误差为9.82%.
The basic theory of memristor is discussed,the functional relationship between memristor resistance value and electric quantity and time is deducesed . A memristor model is established using Simulink,and the current and voltage have hysteretic characteristics between current and volttatge under the excitation of sinusoidal signal is verified. A phase-detecting circuit based on memristor is designed. The phase difference is transformed into the pulse width. The method is analyzed theoretically and the function of the circuit is verified by simulation. Through simulation and calculation,it is found that the non-linear error of the memristor is 9.82% under the influence of the boundary non-linear effect.
作者
张小勇
杨立波
常浩
史俊斌
尚珍珍
ZHANG Xiaoyong;YANG Libo;CHANG Hao;SHI Junbin;SHANG Zhenzhen(Department of Computer Engineering, Taiyuan Univers让y, Taiyuan 030032;State Key Laboratory of Dynamic Testing Technology,North University of China,Taiyuan 030051,China)
出处
《太原师范学院学报（自然科学版）》
2018年第4期65-68,87,共5页
Journal of Taiyuan Normal University:Natural Science Edition
基金
山西省应用基础研究计划(201601D011035,201701D121067)
关键词
忆阻器
惠普模型
鉴相
非线性效应
memristor
HP model
phase-detecting
nonlinear effect
