不同类型籽晶对多晶硅质量的影响

Influence of Different Seed Crystals on the Quality of Polycrystalline Silicon Ingot

采用的籽晶为不同类型的原生多晶硅料,一种是粒径为2～5 mm的原生多晶硅颗粒料;另一种是厚度2 cm左右的原生多晶板料,将二者铺设在同一个坩埚底部,使其各占一半;使得两种籽晶的生长环境,工艺配方及影响长晶的其他因素完全一致,进而有利于更好地比较分析不同类型籽晶对硅锭质量的影响。结果表明,经过对比两种籽晶产出硅锭的晶粒大小,晶粒均匀性,少子寿命以及红外探伤等差异;对比分析两种籽晶的优缺点,发现用粒径为2～5 mm的原生多晶硅料做籽晶具有更好的引晶效果。

The seed crystals used were primary polysilicon materials of different types. One was primary polysilicon particles with particle size of 2~5 mm. The other was the original polycrystalline plate with a thickness of about 2 cm. The two were laid at the bottom of the same crucible, and each took half. Thus, the growth environment, technological formula and other factors affecting the long crystal of the two seed crystals were completely consistent, which was conducive to the better comparison and analysis of the influence of different seed crystals on the quality of silicon ingots. The results show that the grain size, grain uniformity, minor particle life and infrared flaw detection of silicon ingots produced by the two seed crystals are compared. The advantages and disadvantages of the two kinds of seed crystals are compared and analyzed,and it is found that the seed crystals made of primary polycrystalline silicon with particle size of 2~5 mm has better crystal inducing effect.