SiC MOSFET开关特性及多等级栅电压驱动电路

Research on Switching Characteristics and Multi-level Gate Voltage Drive Circuit of SiC MOSFET

针对新型宽禁带功率半导体器件碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET),为了充分发挥其在高功率密度和高效率应用场合中的高速及低功耗特性,分析了SiC MOSFET的开关特性,提出了一种基于复杂可编程逻辑器件(CPLD)的新型多等级栅电压驱动电路(MGD)。在SiC MOSFET开关不同阶段,通过调整栅极驱动电压以改善其开关特性。与传统驱动电路(CGD)相比,提出的MGD在相同门极驱动电阻与栅源极电容前提下,能有效提高开关速度,降低电压电流尖峰、降低开关损耗。最后通过双脉冲实验,分析了栅极驱动电阻,栅源极电容对开关特性的影响,验证了MGD在改善开关特性方面具有明显的优越性。

For silicon carbride (SiC) metal-oxide-semicondutor field-effect transistor(MOSFET) is a new wide bandgap power semiconductor device.In order to give full play to its high speed and low power consumption characteristics in high power density and high efficiency applications, the switching characteristics of SiC MOSFET is analyzed, a new multi-level gate voltage drive circuit (MGD) based on complex programmable logic device (CPLD) is proposed.In different stages of SiC MOSFET switching, its switching characteristics are improved by adjusting the gate drive voltage. Compared with the conventional gate driving circuit (CGD), the proposed MGD can effectively increase the switching speed, reduce the voltage and current peaks, and reduce the switching loss under the premise of the same gate driving resistance and gate source capacitance.Finally, through the double-pulse experiment, the effects of the gate driving resistance and source capacitance on the switching characteristics are analyzed, it is verified that the MGD has obvious advantages in improving the switching characteristics.