摘要
针对单晶硅(100)晶面在氢氧化钾(KOH)腐蚀液中各向异性腐蚀时的削角问题,进行了一项凸角补偿实验。通过不同尺寸与形状组合的〈110〉条形补偿结构,对长方形凸台进行补偿,最终获取具有期望效果的补偿结构。该方法应用于压力传感器芯片的过载保护结构设计。
A convex corner compensation experiment of anisotropic etching in(100)crystal surface of silicon is proposed.The rectangle boss is compensated by〈110〉strips with different dimension and shape,and finally the expected compensation structure is obtained.The compensation method is used for design of overload protection structure in pressure sensor.
作者
郭玉刚
吴佐飞
田雷
GUO Yu-gang;WU Zuo-fei;TIAN Lei(AECC Aero Engine Control System Institute,Wuxi 214063,China;The 49th Research Institute of China Electronics Technology Group Corporation,Harbin 150001,China)
出处
《传感器与微系统》
CSCD
2019年第3期25-27,共3页
Transducer and Microsystem Technologies
关键词
各向异性腐蚀
削角腐蚀
凸角补偿
过载保护
anisotropic etching
cutting angle etching
convex corner compensation
overload protection
