摘要
根据晶圆电镀原理,建立简化的晶圆双面电镀槽模型,分析了改变阴阳极间距对电流密度的影响,探索了各种镀层厚度不同图形双面电镀的可行性。
According to the principle of wafer electroplating,a simplified model of wafer double-sided electroplating cell was established. The effect of changing the distance between cathode and anode on current density was analyzed,and the feasibility of various coating thickness and different patterns of wafer double-sided electroplating was explored.
作者
陈苏伟
CHEN Suwei(The 45th Research Institute of CETC,Beijing 100176,China)
出处
《电子工业专用设备》
2019年第2期13-15,36,共4页
Equipment for Electronic Products Manufacturing
关键词
晶圆电镀
电流密度
镀层厚度
Wafer plating
Current density
Plating thickness
