基于GaN HEMTs的S波段大功率固态功放组件设计

Design of S-band Solid-State Power Module with High Output Power Based on GaN HEMTs

介绍了一种基于氮化镓高电子迁移率晶体管(GaN HEMTs)的S波段大功率固态功放组件,详细阐述了组件的微波链路设计、热设计、BITE设计以及电源设计等设计中的关键性问题。测试结果表明,组件在450μs脉宽、15%占空比条件下输出峰值功率不小于1. 6 k W,效率达到40%。组件创新性地采用实时参数化的数字采样技术、激励/控制输入通道的冗余设计技术,适应高可靠雷达系统的健康管理对组件的智能化要求。

A kind of S-band solid-state power module is introduced with high output power based on GaN HEMTs.The design of the module is described in detail in terms of the key problems such as the design of microwave chain,heat dissipation,BITE function,power supply,and so on.Measurement results show that the power module delivers more than 1.6 kW peak power and a typical 40%PAE with 450μs pulse width and 15%duty cycle.The module innovatively utilizes real-time digital sampling technology and redundancy design of excitation/control input channel,which makes it intelligent and proper for the application in the reliable radar systems.