X波段FBAR用AlN薄膜制备研究

Preparation of AlN Films for X Band FBAR Devices

采用中频磁控溅射法,在硅基上制备了X波段薄膜体声波谐振器(FBAR)滤波器用AlN压电薄膜。对AlN薄膜进行了分析表征,结果表明,AlN压电薄膜具有良好的(002)面择优取向,摇摆曲线半峰宽为2.21°,膜厚均匀性优于0.5%,薄膜应力为-5.02 MPa,应力可在张应力和压应力间进行调节。将该AlN薄膜制备工艺应用于FBAR器件的制作,研制出X波段FBAR器件,谐振频率为9.09 GHz,插入损耗为-0.38 dB。

The aluminum nitride(AlN)films for X band film bulk acoustic resonator(FBAR)devices were grown by mid frequency magnetron sputtering on silicon substrates.The AlN films were analyzed and characterized.The results show that the AlN films have preferred orientations of(002),the full width at half maximum of the rocking curve is 2.21°.The thickness uniformity of AlN films is less than 0.5%.The film stress is -5.02 MPa,and the stress can be adjusted between tensile and compressive stress.The FBAR devices were fabricated by using this AlN film preparation process,and X-band FBAR devices with the resonator frequency of 9.09 GHz and insertion loss of -0.38 dB have been developed.