摘要
Third-generation-semiconductor zinc oxide is utilized as an energy converting material in a betavoltaic battery, where 0.06 Ci^(63) Ni and 8 Ci^(147) Pm are used as the beta sources. Based on a Monte Carlo simulation, the full scales of the devices are derived as 17 and 118 lm,respectively, for both sources. The influences of semiconductor doping concentrations on the electrical properties of the devices are analyzed. For a typical doping concentration N_A= 10^(17) cm^(-3), N_D= 10^(16) cm^(-3), the conversion efficiencies are 7.177% and 1.658%, respectively, using63 Ni and147 Pm sources. The calculation results of energy deposition in materials for the two sources show that the doping concentrations drop to 1 × 10^(13)–5×10^(14) cm^(-3) and 1 × 10^(12)–5×10^(13), and accordingly, the energy conversion efficiencies rise to 14.212% and 18.359%, respectively.
Third-generation-semiconductor zinc oxide is utilized as an energy converting material in a betavoltaic battery, where 0.06 Ci^(63) Ni and 8 Ci^(147) Pm are used as the beta sources. Based on a Monte Carlo simulation, the full scales of the devices are derived as 17 and 118 lm,respectively, for both sources. The influences of semiconductor doping concentrations on the electrical properties of the devices are analyzed. For a typical doping concentration N_A= 10^(17) cm^(-3), N_D= 10^(16) cm^(-3), the conversion efficiencies are 7.177% and 1.658%, respectively, using63 Ni and147 Pm sources. The calculation results of energy deposition in materials for the two sources show that the doping concentrations drop to 1 × 10^(13)–5×10^(14) cm^(-3) and 1 × 10^(12)–5×10^(13), and accordingly, the energy conversion efficiencies rise to 14.212% and 18.359%, respectively.
基金
supported by the National Major Scientific Instruments and Equipment Development Projects(No.2012YQ240121)
the National Natural Science Foundation of China(No.11075064)
