摘要
We predict a coexistence of magnetic and electric orders on clean Si(0 0 1) surfaces by first-principles calculations. Upon hole-carrier doping, the Si surfaces can be ferromagnetic, with polarized spins concentrated in an atom-thick space near the surface, due to an exchange splitting of localized s-like surface states on surface Si dimers. The surface magnetization can be controlled by reorienting the electric polarization of Si dimers, manifested as a transition from the magnetic antiferroelectric ground state to ferroelectric p(2×1) reconstruction that can be driven by an in-plane external electric field. The coupling between magnetic and electric orders can be further enhanced by strain silicon technology, rendering the Si surfaces as the first metal-free material displaying a multiferroic behavior.
We predict a coexistence of magnetic and electric orders on clean Si(0 0 1) surfaces by first-principles calculations. Upon hole-carrier doping, the Si surfaces can be ferromagnetic, with polarized spins concentrated in an atom-thick space near the surface, due to an exchange splitting of localized s-like surface states on surface Si dimers. The surface magnetization can be controlled by reorienting the electric polarization of Si dimers, manifested as a transition from the magnetic antiferroelectric ground state to ferroelectric p(2×1) reconstruction that can be driven by an in-plane external electric field. The coupling between magnetic and electric orders can be further enhanced by strain silicon technology, rendering the Si surfaces as the first metal-free material displaying a multiferroic behavior.
基金
supported by the National Natural Science Foundation of China(11772153,51535005,and 51472117)
the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures(MCMS-0417G01,MCMS-I-0418 K01,and MCMS-I-0418Y01)
the Fundamental Research Funds for the Central Universities(NE2018002,NC2018001)
Youth Thousand Talents Program
