期刊文献+

一种高精度低温漂带隙基准电路的设计与实现 被引量:6

Design and realization of a high-precision and low temperature drift reference circuit
下载PDF
导出
摘要 针对带隙基准电路对集成电路精度的影响,提出了一种新的低温漂带隙基准电路。通过分段温度补偿,补偿了带隙基准电路,减小了温度漂移,优化了基准的温度性能。基于西岳公司3μm18V双极工艺,设计了基准电路和版图,并进行流片。仿真和流片结果表明:在典型工艺角下,基准在-55℃~125℃内,温度系数为1.7×10-6~6.0×10-6/℃;在2.2V的电源幅度范围下,具有0.03mV/V的电源抑制特性。该电路已成功应用于一款线性稳压电源中。 A novel bandgap reference circuit with a low temperature coefficient is presented,which compensates the voltage slightly and optimizes the temperature characteristic by setting up a subsection compensation circuit.The circuit and its layout have been done by the 3μm 18 VBipolar process in the No.771 Institute.Simulation and fabrication results show that the temperature coefficient of the voltage reference is 1.7×10^-6~6.0×10^-6/℃ at-55℃~125℃ under the condition of the 2.2 V wide input voltage range,and that the circuit possesses the power supply rejected characteristic of 0.03 mV/V.This circuit and its layout have been successfully applied to a low-dropout regulator.
作者 刘晓轩 张玉明 季轻舟 曹天骄 LIU Xiaoxuan;ZHANG Yuming;JI Qingzhou;CAO Tianjiao(The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian Univ., Xi'an 710071, China;Xi’an Microelectronic Technology Institute,Xi'an 710065, China)
出处 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2019年第2期41-46,共6页 Journal of Xidian University
关键词 带隙基准 分段温度补偿 高阶温度特性 bandgap reference subsection temperature compensation high-order temperature characteristic
  • 相关文献

参考文献3

二级参考文献24

  • 1朱樟明,杨银堂,尹韬.一种新型低压高精度CMOS电流源[J].西安电子科技大学学报,2005,32(2):174-178. 被引量:7
  • 2Banba H, Shiga H, Umezawa A. A CMOS Bandgap Reference Circuit with Sub-l-V Operation [J]. IEEE Journal of Solid-State Circuits, 1999, 34(2): 670-674.
  • 3Leung K N, Mok P T. Sub-l-V15-ppm/℃ CMOS bAndgap Voltage Reference without Requiring Low Threshold Voltage Device [J]. IEEE Journal of Solid-State Circuits, 2002, 37(2) : 526-530.
  • 4Sawan Y H. A 900 mV 25μW High PSRR CMOS Voltage Reference Dedicated to lmplantable Micro-devices[EB/OL]. [2011-10-10]. http://wenku, baidu, com/view/Tegdlec66137ee06eff91897, html.
  • 5Isikhan M, Reich T, Richter A, et al. A New Low Voltage Bandgap Reference Topology [EB/OL]. [2011-10-11]. http ://ieeexplore. ieee. org/xpls/abs_all, jsp?arnumber = 5410966 & tag= 1.
  • 6Giustolisi G, Palumbo G, Criscione M, et al. A New Voltage Reference Topology Based on Subthreshold MOSFETs [DB/OL]. [2011-10-11]. http://ieeexplore, ieee. org/xpls/abs_all. jsp?arnumber= 1471547 &tag= 1.
  • 7Luis H, Pimenta T C, Moreno R L. An Ultra Low-voltage Ultra Low-power CMOS Threshold Voltage Reference [J]. IEICE Trans on Electronics, 2007, 90(10) : 2044-2050.
  • 8Cajueiro P J, dos Reis Filho C A. CMOS Bandgap with Base-current Thermal Compensation [C]//IEEE Proc of the 15th Symposium on Integrated Circuits and System Design (SBCCI). Brazil: lEE, 2002: 407-411.
  • 9Ng D C W, Kwong D K K, Wong N. A Sub-1 V, 26 W, Low-output-impedance CMOS Bandgap Reference with a Low Dropout or Source Follower Mode [J]. IEEE Trans on Very Large Scale Integration (VLSI) Systems, 2011, 19(7): 1305-1309.
  • 10Fayomi C J B, Stratz S J. Novel Approach to Low-voltage Low-power Bandgap Reference Voltage in Standard CMOS Process [DB/OL]. [2011-10-13]. http://ieeexplore, ieee. org/xpls/abs_all, jsp?arnumber= 4263340.

共引文献20

同被引文献45

引证文献6

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部