用于智能窗的低温相变VO_2薄膜

VO_2 Film with Low Transition-temperature for Smart Windows

用磁控溅射法和退火处理在石英衬底上制备了高质量的二氧化钒薄膜,实验结果显示制备的薄膜为纳米级,晶粒均匀。相变前后薄膜电阻变化了4个数量级,说明制备的薄膜具有很好的相变特性。电学和光学实验均证明了制备的薄膜相变温度在53℃左右,比纯的单晶VO_2具有低温相变特性。热致相变实验和分光光度计测试结果均显示VO_2薄膜在红外波段具有很高的开关率,在波长为3.36处开关率达到70.1%,进一步证明了制备的VO_2薄膜在智能窗应用方面具有实用性。

High quality VO 2 film was fabricated on quartz glass with DC magnetron sputtering technology and annealing method. Experiment results with atomic force microscope (AFM) demonstrated that the VO 2 film was elaborate and homogeneous. The metal-to-insulator (MIT) transition to the sheet resistance of the deposited VO 2 film changed by 4 orders of magnitude, which shows the excellent MIT transition characteristic of the VO 2 film. Both the sheet resistance analysis and the optical transmission revealed the deposited VO 2film exhibited the MIT transition at about 53℃.Heat-induced MIT transition experiment results showed that the VO 2 film had high infrared optical switching ratio, which could reach up to 70.1% at the wavelength of 3.36 . The transmission curves at different temperatures which are obtained with spectrometer further demonstrated low transition-temperature and high switching ration characteristics. This proves the practicability of VO 2 film for smart windows application. The deposited high quality VO 2 film is also a potential material for photoelectric detector, optical switching, absorber, laser protection and so on.