摘要
国产双极工艺元器件应用于航天型号存在低剂量率辐射损伤增强效应风险,需要对其开展低剂量率辐照试验评估。在0.01 rad(Si)/s低剂量率辐照条件下,测试分析了不同工艺器件对不同偏置条件的敏感性差异;对比0.1 rad(Si)/s辐照试验结果,分析了器件的低剂量率辐射损伤增强效应特性,建立了辐射损伤增强因子和参数判据法相结合的评价标准;依据此标准讨论了各型号器件的低剂量率辐射增强敏感度以及抗电离总剂量辐射的能力。
Homemade bipolar process components to be applied in spacecraft have the risk of enhancing the low dose rate sensitivity.Therefore,the low dose rate radiation test evaluation is essential for newly-applied bipolar process devices.In this paper,the irradiation tests with low dose rate of 0.01 rad(Si)/s are carried out on some homemade bipolar devices.The sensitivities of different process devices under different bias conditions are analyzed.Their radiation hardness ability against the low dose rate radiation is analyzed as compared with the results obtained from the 0.1 rad(Si)/s test.A method for evaluating the radiation damage enhancement factor and the parameter selection criterion are proposed.The sensitivity enhancement of various types of devices under the low dose rate irradiation is discussed.The total dose radiation hardness ability of each device is given in the end.
作者
李鹏伟
吕贺
张洪伟
孙明
刘凡
孙静
LI Pengwei;LV He;ZHANG Hongwei;SUN Ming;LIU Fan;SUN Jing(China Aerospace Components Engineering Center;National Innovation Center of Radiation Application: Beijing 100029,China;School of Materials,Harbin Institute of Technology,Harbin 150006,China;The No.24 Institute of China Electronics Technology Group Corporation,Chongqing 400060,China;Xinjiang Technical Institute of Physics,Chinese Academy of Sciences,Urumqi 830011,China)
出处
《航天器环境工程》
2019年第2期146-150,共5页
Spacecraft Environment Engineering
关键词
线性电路
低剂量率辐照
辐射损伤增强因子
抗辐射能力
linear circuit
low dose rate irradiation
radiation damage enhancement factor
radiation hardness
