摘要
Inorganic perovskite CsPbBr3 quantum dots (QDs) are potential nanoscale photosensitizers;moreover,two-dimensional (2-D) molybdenum disulfide (MoS2) has been intensively studied for application in the active layers of optoelectronic devices.In this study,heterostructures of 2D-monolayered MoS2 with zero-dimensional functionalized CsPbBr3 QDs were prepared,and their nanoscale optical characteristics were investigated.The effect of n-type doping on the MoS2 monolayer after hybridization with perovskite CsPbBr3 QDs was observed using laser confocal microscope photoluminescenca (PL) and Raman spectra.Field-effect transistors (FETs) using MoS2 and the MoS2-CsPbBr3 QDs hybrid were also fabricated,and their electrical and photoresponsive characteristics were investigated in terms of the charge transfer effect.For the MoS2-CsPbBr3 QDs-based FETs,the field effect mobility and photoresponsivity upon light irradiation were enhanced by ~ 4 times and a dramatic ~ 17 times,respectively,compared to the FET prepared without the parovskite QDs and without light irradiation.It is noteworthy that the photoresponsivity of the MoS-2-CsPbBr3 QDs-based FETs significantly increased with increasing light power,which is completely contrary to the behavior observed in previous studies of MoS2-based FETs.The increased mobility and significant enhancement of the photoresponsivity can be attributed to the n-type doping effect and efficient energy transfer from CsPbBr3 QDs to MoS2.The results indicate that the optoelectronic characteristics of MoS2-based FETs can be significantly improved through hybridization with photosensitive parovskite CsPbBr3 QDs.
