摘要
阻变存储器(RRAM)是新一代存储技术的理想代表之一,利用旋涂法和喷墨打印法制备了Ag/IGZO/ITO结构的RRAM,首先在ITO玻璃上旋涂IGZO薄膜,再在IGZO薄膜上打印Ag,制备MIM结构的器件,并使用半导体参数分析仪(KEITHLEY-4200A-SCS)测试其电学性能,测试结果显示其具有双极组变特性。
Resistive memory (RRAM) is one of the ideal representatives of next-generation memory technology. The RRAMof Ag/IGZO/ITO structure is prepared by spin coating and inkjet printing. Firstly, IGZO film is spin-coated on ITO glass. Ag was printed on the IGZO film to prepare a device of MIM structure, and its electrical properties were tested using a semiconductor parameter analyzer (KEITHLEY-4200A-SCS), and the test results showed that it had bipolar group variation characteristics.
作者
陈沼龙
Chen Zhaolong(Guangdong University of Technology,Guangzhou 510006,Guangdong,China)
出处
《农业技术与装备》
2018年第7期58-59,共2页
Agricultural Technology & Equipment
