CMOS电路场区抗辐照加固工艺研究

Research on Radiation Hardening Technology for Field Oxide Area of CMOS Circuit

CMOS电路场氧区对辐照高度敏感,场寄生管的阈值电压易在辐照下产生漂移并导通,从而引起电路漏电流增大。为有效地降低辐照后场区正电荷累积,提高场区抗辐照性能,使辐照后电路漏电流增加值降低,采用二氧化硅与氮化硅复合场介质制造工艺,通过比较新工艺与常规场氧加固工艺条件下电路漏电流的变化来对比两者的抗电离辐照性能,并给出了试验数据。研究结果表明,采用二氧化硅与氮化硅复合场介质能够有效的抑制辐照引起的漏电流增大,提高场区抗辐照性能,进而提高整体电路的抗辐照性能。

The field oxygen region of CMOS circuit is highly sensitive to irradiation,and the threshold voltage of field parasitic transistor is easy to drift and turn on under irradiation,thus causing circuit leakage current to increase.In order to effectively reduce the accumulation of positive charges in the field after radiation,improve the radiation hardening characteristic of the field area,and reduce the added value of the leakage current of the circuit after radiation,SiO2-Si3N4 composite field layer manufacturing process is used,and the ionization radiation resistance of the new process and the circuit leakage current under the condition of conventional field oxygen reinforcement process are compared,with the experimental data been given.The results show that the SiO2-Si3N4 composite layer can effectively inhibit the increase of leakage current caused by radiation,improve the radiation hardening performance of the field,and further improve the radiation hardening performance of the whole circuit.