掺钨氧化铟薄膜厚度对异质结电池性能的影响

DEPENDENCE OF SILICON HETEROJUNCTION CELL'S PROPERTIES ON THICKNESS OF TUNGSTEN-DOPED INDIUM OXIDE FILM

研究工业化反应等离子体沉积(RPD)设备制备的掺钨氧化铟(IWO)薄膜的厚度变化对薄膜光电性能和非晶硅/晶体硅异质结(SHJ)电池性能的影响。X200℃退火后具有良好的结晶性。通过控制IWO薄膜的沉积时间,制备IWO薄膜厚度递增的一系列8英寸SHJ电池样品。研究发现随着IWO膜平均厚度为82 nm时,SHJ电池转换效率最高达到21.87%,对异质结电池工业化生产具有指导意义。

Tungsten-doped indium oxide(IWO)thin films were prepared by industrial reactive plasma deposition(RPD)system,and the dependence of optical and electric properties of IWO films and amorphous silicon/crystalline silicon heterojunction(SHJ)solar cell on IWO thickness were studied. X-ray diffraction analysis shows the IWO thin films have good crystallinity after 200 ℃ annealing. A series of 8-inch SHJ cells were prepared via controlling the IWO deposition time. It was found that the average transmittance of IWO films first increased and then decreased with the increasing IWO thickness,while the square resistance of IWO films decreased with the increasing IWO thickness. When the thickness of IWO thin film was 82 nm,the efficiency of SHJ cell achieved the highest value of 21.87%.