摘要
Under the support of the National Natural Science Foundation of China,the research team led by Prof.Zhang Ze(张泽)and Prof.Wang JiangWei(王江伟)at the Center of Electron Microscopy and State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,revealed the atomistic mechanism of disconnection-mediated grain boundary migrations in metallic nanostructures,which was published in Nature Communications(2019,10:156).
