TCAD结合SPICE的单粒子效应仿真方法

The Technique of Single Event Effect Simulation Uses TCAD and SPICE

为解决传统集成电路抗单粒子加固设计中存在的不足,利用TCAD及SPICE软件,探索出一种单粒子效应仿真与电路抗辐射加固设计相结合的方法。该方法通过TCAD软件的器件建模、仿真单粒子效应对器件的影响,得出器件在单粒子辐射条件下的3个关键参数。利用SPICE软件将此参数转化为模拟单粒子效应的扰动源,进而指导电路抗单粒子效应的加固设计工作。通过对一款SRAM的加固设计及辐射试验对比,证明了该方法的正确性和有效性,同时也为以后单粒子效应设计加固提供了依据。

A technique of single event effect simulation was explored which bases TCAD and SPICE, for resolving the insufficiency of circuits radiation hardened in tradition design. This technique is modeling for device used TCAD, simulation the effect of Single Event Effect, then obtaining three key parameters in radiation environment. SPICE changed those parameters to disturbing signal of Single Event Effect. This way is for finding weak spots and guiding radiation hardened in circuit. This work is proved in a sram cell design. It supplies a well base for the design of radiation hardened circuits in future.