120 GHz GaAs MMIC双平衡式基尔伯特混频器

120 GHz GaAs MMIC double-balanced Gilbert mixer

作为低频段混频电路中的典型拓扑结构,基尔伯特单元在毫米波、太赫兹领域的应用较少,在Ⅲ-Ⅴ族化合物半导体单片微波集成电路(MMIC)设计中,超过100 GHz的基尔伯特混频器很少有文献报导。基于70 nmGaAsmHEMT工艺,设计了一款120 GHz的双平衡式基尔伯特混频器,同时对该混频器版图结构进行优化改进,提升了混频器中频差分输出端口间的平衡度。仿真结果显示该混频器在本振输入0 dBm功率时,在100～135 GHz频率范围内有(-7.6±1.5) dB的变频损耗,射频输入1 dB压缩点为0 dBm@120 GHz,中频输出带宽大于10 GHz,差分输出信号间的功率失配<1 dB,相位失配<4°。该芯片直流功耗为90 mW,面积为1.5 mm×1.5 mm。

As a standard topology in low frequency region, the double-balanced Gilbert mixer is seldom applied in millimeter-wave and terahertz range. For compound semiconductor Monolithic Microwave Integrated Circuit(MMIC) design, few literature focuses on Gilbert mixer above 100 GHz. In this paper, a 120 GHz double-balanced Gilbert mixer is designed based on 70 nm GaAs High Electron Mobility Transistors(mHEMT) technology. And the layout is modified to improve the IF output balance performance. The simulated results show that within 100-135 GHz,the conversion loss is(-7.6±1.5) dB with PLO=0 dBm. The P1 dB of RF input is 0 dBm@120 GHz. The bandwidth of IF is above 10 GHz and the differential IF output ports own an imbalance performance better than 1 dB and 4°. The chip consumes a DC power of 90 mW and the chip size is 1.5 mm×1.5 mm.