10kV高重频开关组件设计

Design of high repeat frequency switch module with 10kV

设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)的高压开关组件。通过串联20只1 kV的RF MOSFET单元电路,获得耐压10 kV以上的高速、高重复频率的开关组件。开展了高压开关组件的结构设计和1kV的RFMOSFET单元电路设计及散热设计。利用开关组件进行了10 kV脉冲源实验装置设计,测试结果发现脉冲前沿较仿真结果变缓。

A design of high voltage switch module based on a stack of Metal Oxide Semiconductor Field-Effect Transistor(MOSFET) is put forward. By stacking 20 RF MOSFETs with Uds of 1 kV, the switch module shows high speed and high repeat frequency, and can operate above 10 kV. The structure of high voltage switch module, a unit circuit using one RF MOSFET switch and a method of cooling the switch are designed. A pulse generator circuit based on the high voltage switch module is simulated. A 10 kV pulse generator is created by the stack. The turn-on time of pulse generated by experimental device is lower than simulated result.