摘要
The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.
The performance of a piecewise-stressed ZnO piezoelectric semiconductor nano?ber is studied with the multi-?eld coupling theory. The ?elds produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Speci?c distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.
基金
Project supported by the National Natural Science Foundation of China(Nos.11672113 and 51435006)
the Key Laboratory Project of Hubei Province of China(No.2016CFA073)