Ba_(2-x)Pb_xTiSi_2O_8陶瓷的合成、结构与电性能研究

Synthesis, Structure and Electrical Properties of Pb-Doped Ba_(2-x)TiSi_2O_8 Ceramics

采用高温固相反应法合成了Pb掺杂的Ba_(2-x)Pb_xTiSi_2O_8(x=0～0.3)材料,通过X-射线衍射粉末衍射仪(XRD)和扫描电镜(SEM)分别对其物相与微观形貌进行了表征,结果显示Ba_(2-x)Pb_xTiSi_2O_8(x=0.0～0.3)材料是单一物相,结构为四方晶系,空间群为P4bm,在固溶体中Pb是均匀分布的,并且随着Pb含量的增加,成功降低了Ba_(2-x)Pb_xTiSi_2O_8陶瓷的烧结致密温度。另外,通过交流阻抗对样品进行了电性能研究,研究显示,材料的电性能依然是由晶粒响应引起的,与Ba_2TiSi_2O_8陶瓷相比,通过Pb的等价掺杂并不能提高了材料的导电率,却可以降低Ba_(2-x)Pb_xTiSi_2O_8(x=0.1～0.3)材料的活化能。另外,随着Pb含量的增多成功提高了材料的介电性能。材料在脉冲电容器、低频谐振器等装置中有广泛的应用。

The Pb-doped Ba2-xPbxTiSi2O8(x=0-0.3) materials were synthesized by high temperature solid-state reaction. The phase and micro-morphologies of the Pb-doped Ba2-xPbxTiSi2O8(x=0~0.3) were studied by X-ray diffraction powder diffraction(XRD) and scanning electron microscopy(SEM). The characterization was carried out. The results show that the Ba2-xPbxTiSi2O8(x=0~0.3) material is a single phase with non-centrosymmetric tetragonal structure of space point group P4 bm. Pb is uniformly distributed in the solid solution. With the increase of content, the sintering densification temperature of ceramics was effectively lowered. In addition, the electrical properties of the samples were studied by AC impedance. Research shows that the electrical properties of the material are still caused by the grain response. Compared with Ba2Ti Si2O8 ceramics, the equivalent substitution of Pb does not improve the conductivity of the material. However, it can effectively reduce the activation energy of Ba2-xPbxTiSi2O8(x=0~0.3) material. In addition, as the Pb content increases, the dielectric properties of the material gradually increase. The dielectric properties of the material increases with the gradually increase of Pb content. The materials are widely used in pulse capacitors, low frequency resonators and other devices.