调制溅射功率对掺镓氧化锌薄膜光电性能影响

Influence of Sputtering Power Modulation on the Photoelectric Properties of Ga-doped ZnO Thin Films

使用射频磁控溅射法在石英衬底上制备ZnO掺Ga薄膜(GZO),通过调制不同的溅射功率制备GZO薄膜,研究了溅射功率对GZO薄膜光电学性能的影响。对不同溅射功率下的GZO薄膜进行X射线衍射、扫描电镜(SEM)、内应力、紫外可见光光谱、光致发光谱分析和电学性能分析。结果表明:随着溅射功率的提高,GZO薄膜保持良好的C轴择优取向;薄膜结晶度增加,晶界减少,晶粒尺寸增大;透光性减小;薄膜缺陷降低;薄膜表面方块电阻下降。

Ga-doped ZnO thin films (GZO) were prepared on quartz substrates by RF magnetron sputtering. The effects of sputtering power on the optical and electrical properties of GZO thin films were studied. X-ray diffraction, scanning electron microscopy (SEM), internal stress, ultraviolet and visible spectra, photoluminescence spectra and electrical properties of GZO thin films were analyzed under different sputtering power. The results show that with the increase of sputtering power, the GZO film keeps a good C-axis preferred orientation, the crystallinity of the film increases, the grain boundary decreases, the grain size increases, the transmittance decreases, the defect of the film decreases, and the square resistance of the film surface decreases.