摘要
简单介绍了漂移阶跃恢复二极管(DSRD)的物理特性以及工作机理。介绍了DSRD开关堆叠技术及两种典型电路,并分析其工作机理,且对比了多种半导体开关的参数。主要阐述了国内外漂移阶跃恢复二极管发展历程以及在脉冲功率技术中的应用。随着新材料的发展及新工艺、新结构的创新,展望了DSRD的发展方向。
The physical characteristics and working mechanism of drift step recovery diodes (DSRDs) are briefly presented. The stacking technology of DSRD switches and two typical circuits are introduced, and their working mechanism is analyzed. The parameters of various semiconductor switches are compared. The development of DSRDs at home and abroad and their applications in pulse power technology are described. With the development of new materials and the innovation of new technology and new structure, the development direction of DSRDs is prospected.
作者
张琦
金晓
宋法伦
ZHANG Qi;JIN Xiao;SONG Fa-lun(Graduate Department, CAEP, Mianyang 621900, China;Institute of Applied Electronics, CAEP, Mianyang 621900, China)
出处
《真空电子技术》
2019年第2期8-13,共6页
Vacuum Electronics
