基于g-C3N4光催化剂缺陷设计的改进策略

Improving Strategy for Defect Design of Photocatalyst Based on g-C3N4

类石墨相氮化碳(g-C3N4)是一种共轭聚合物半导体,独特的π共轭结构使其具有良好的光催化活性,成为光催化领域的研究热点。虽然g-C3N4具有化学稳定性高、制备方法简便、成本低等优点,但是由于其具有可见光吸收不足、光生载流子分离效率低、比表面积不足等缺点,使其在实际应用中受到较大限制。因此通过不同的方法对g-C3N4进行改性修饰成为近年来的该领域的研究重点。本文综述了近年来有关通过构建异质结、元素掺杂、形貌改变、碳材料负载等方法提高g-C3N4的光催化活性的研究,阐述了相关杂化材料的增强光催化机理,并对今后的研究进行了展望。

Graphitic carbon nitride(g-C3N4)is a conjugated polymer semiconductor,and has good photocatalytic activity due to its unique structure,which has become a research hotspot in the field of photocatalysis.Although g-C3N4 has the advantages of high chemical stability,simple preparation method,low cost,etc.,it has a large limitation in practical applications due to its shortcomings of insufficient visible light absorption,low photocarrier separation efficiency,and insufficient specific surface area.Therefore,modification of g-C3N4 by different methods has become the focus of relevant research.In this paper,the photocatalytic activity of g-C3N4 is strengthened by constructing heterojunction,element doping,morphology change,carbon material loading,etc.,and the enhanced photocatalytic mechanism of these hybrid materials is described.