多孔硅腐蚀制造空腔薄膜方法

Fabricate Si-Membranes by Using Porous silicon Electrochemical Etching

本文介绍了在具有N-网格结构的单晶硅上通过电化学腐蚀的方法,将硅片部分区域转化成多孔硅,通过常规单晶硅外延工艺,使多孔硅所在区域形成外延单晶硅下的空腔结构。该制造方法除电化学腐蚀工艺外,完全与CMOS工艺方法兼容,具有成本低,良率高,膜厚均匀等优势,是一种较为理想的空腔薄膜制作方法。

In this paper introduces the method of electrochemical etching on monocrystalline silicon,which transform part of silicon wafer into porous silicon.The cavity is formed in stead of porous silicon region,and the Si-Membrance is sealed by conventional epitaxial monocrystalline silicon technology.In addition to the electrochemical etching process,this manufacturing method is completely compatible with the CMOS process method,and has the advantages of low cost,high yield and high parameter consistency.Therefore,it is an ideal Si-Membranes manufacturing method.