声表面波器件用SiO_2/ZnO/金刚石/Si多层结构制备

Preparing SiO_2/ZnO/ diamond/silicon multilayer structure for surface acoustic wave devices

为获得高频、高性能金刚石声表面波器件的多层结构,在金刚石/Si衬底使用磁控溅射方法优化ZnO与SiO_2薄膜沉积工艺参数,制备了具有正负温度系数组合的SiO_2/ZnO/金刚石/Si多层结构,并对多层结构进行表征。结果表明:随着氩氧比增加,ZnO薄膜的沉积速率不断加快,薄膜的表面粗糙度不断增大;ZnO薄膜中的原子摩尔分数比随O_2输入量的减少而逐渐接近理想的1∶1。不同氩氧比下制备的ZnO薄膜均呈(002)面择优取向生长,其中在氩氧比7∶1时,获得了具有细小柱状晶特征、C轴择优取向程度较高的ZnO薄膜。采用最优的ZnO和SiO_2薄膜沉积工艺,在金刚石/Si衬底获得了具有清晰界面的SiO_2/ZnO/金刚石/Si多层结构。

To prepare the multilayer structure for surface acoustic wave devices, the deposition parameters of ZnO and SiO2 films were optimized using magnetron sputtering method and SiO2 /ZnO/ diamond/Si multilayer structure was prepared. With the increase of the argon oxygen ratio, the deposition rate of ZnO thin films were accelerated, and the surface roughness became larger. The atomic molar fraction ratio of ZnO films approached ideal 1∶1. All ZnO films prepared under different argon oxygen ratios presented (002) preferred orientation. At the argon oxygen ratio of 7∶1, ZnO film possessed the fine columnar grains and higher C-axis preferred orientation. The SiO2 /ZnO/diamond/Si multilayer structure with clear interface was obtained on diamond/Si substrate by using the optimal deposition process of ZnO and SiO2 thin films.