CdSe纳米晶薄膜的光敏特性研究

Photosensitive Properties of Nanocrystalline CdSe Thin Film

硒化镉(CdSe)是一种光电性能优异的Ⅱ-Ⅵ族化合物半导体。采用真空热蒸发技术在Si(100)衬底上制备出高质量的CdSe纳米晶薄膜,并利用X射线衍射仪(XRD)、Raman光谱仪、膜厚测试仪、扫描电镜(SEM)和数字源表对其结晶性能、晶体结构、表面形貌及光敏特性进行了表征。结果显示,CdSe纳米晶薄膜呈六方纤锌矿结构,纯度较高,结晶性能较好,沿c轴择优生长的优势明显;同时,薄膜具有典型的光敏电阻特性,且电阻值受光照强度、退火温度影响明显。

Cadmium selenide (CdSe) is a II-VI compound semiconductor which exhibited excellent photoelectric performance. The nanocrystalline CdSe was deposited in Si (100) substrate by thermally evaporating. The crystallization property, crystal structure and photosensitive properties were characterized by XRD, Raman, SEM, Thickness testing instrument and SourceMeter. The results show that the good purity and high crystalline of the nanocrystalline CdSe, which exhibits an obvious growth advantage of the film with the c axis orientation, and has a hexagonal close packed wurtzite. Meanwhile, illuminance and annealing temperature has significant effect on the resistance of the sample, which present some typical characters of photoresistance.