横向双锥快速生长35%DKDP晶体的研究

Study on the Growth of 35% DKDP Crystals by Rapid Horizontal Growth Method

在ICF工程中Ⅱ类三倍频晶体使用的是含氘量70%DKDP晶体,而70%DKDP晶体生长难度大,成本高,因此选用氘含量低,性能达到工程要求的DKDP晶体作为Ⅱ类三倍频晶体是很有必要的。采用横向双锥快速生长技术生长氘含量约35%DKDP晶体,按照Ⅱ类方向进行切割,测试三倍频激光损伤阈值和横向受激拉曼散射效应(TSRS),并与70%DKDP晶体进行对比。实验结果表明,所生长含氘量35%DKDP晶体比70%DKDP晶体损伤阈值约高1. 8倍,而在881. 7 cm^(-1),35%DKDP晶体的拉曼散射峰值强度比70%DKDP晶体高出约23%,70%DKDP晶体的TSRS比35%小。

70% deuterated DKDP crystals are used as type-II third harmonic generator(THG) optics in inertial confinement fusion(ICF) systems, while DKDP crystals with 70% deuterium content are difficult to grow and expensive. Therefore, it is necessary to select DKDP crystals with low deuterium content and performance meeting ICF systems as type II third harmonic generator optics crystals. A about 35% DKDP crystal was grown by a rapid horizontal growth method, which was cut at the type II THG direction, laser induced damage threshold and transverse stimulated Raman scattering were measured and compared with 70% DKDP crystal. The experimental results show that the laser induced damage of 35% DKDP crystal was about 1.8 times higher than that of 70% DKDP crystal, while the Raman scattering peak intensity of 881.7 cm ^-1 , 35% DKDP crystal was about 23% higher than that of 70% DKDP crystal, and transverse stimulated Raman scattering of 70%DKDP crystal was smaller than that of 35% DKDP.