NiFe_2O_4/(0.8BaTiO_3-0.2Na_(0.5)Bi_(0.5)TiO_3)异质结层状复合薄膜的磁电性能

Magnetoelectric Properties of Ni Fe_2O_4/(0.8BaTiO_3-0.2Na_(0.5)Bi_(0.5)TiO_3) Heterostructure Layered Composite Thin Films

采用脉冲激光沉积法在(001)-SrRuO_3/SrTiO_3(SRO/STO)衬底上生长了2-2型NiFe_2O_4/(0. 8BaTiO_3-0. 2Na_(0.5)Bi_(0.5)TiO_3)(NFO/BT-NBT)磁电复合薄膜。X射线衍射仪(XRD)结果显示所有薄膜均为(00l)择优取向结构。物理性能测试结果表明:NFO/BT-NBT复合薄膜同时具有良好的铁磁性和铁电性,但不同的沉积顺序对复合薄膜的磁电耦合性能产生重要影响。以铁磁材料NFO为顶层的NFO/BT-NBT/SRO/STO异质结的磁电耦合系数(α_E～110m V·cm^(-1)·Oe^(-1))大于以铁电材料BT-NBT为顶层的BT-NBT/NFO/SRO/STO异质结的磁电耦合系数(α_E～80 m V·cm^(-1)·Oe^(-1)),这是NFO层受到衬底束缚作用不同的结果。

The magnetoelectric NiFe 2O 4/(0.8BaTiO 3-0.2Na 0.5 Bi 0.5 TiO 3)(NFO/BT-NBT) composite thin films epitaxially grown on (001)-SrRuO 3/SrTiO 3(SRO/STO) substrates were prepared via pulsed laser deposition (PLD). X-ray diffraction patterns indicate that all the films display the (00l) preferred orientation. Physical properties testing indicated that such multiferroic heteroepitaxial composite thin films exhibits simultaneously excellent ferroelectric and ferromagnetic properties, but the properties of the magnetoelectric coupling was affected by the growth sequence of thin films. The magnetoelectric coupling coefficient of the NFO/BT-NBT/SRO/STO with the top layer of NFO (α E -110 mV·cm ^-1 ·Oe^-1 ) heterostructures is larger than that of BT-NBT/NFO/SRO/STO with the top layer of BT-NBT (α E -80 mV·cm ^-1 ·Oe^-1 ) heterostructures, which due to the result that NFO suffers different substrate clamping effects.