ZnO-PSA Ⅱ型异质结界面电荷转移过程研究

Interfacal Charge Transfer Process of ZnO-PSA Type-Ⅱ Heterojunction

采用稳态光致发光光谱和纳秒时间分辨瞬态光谱(NTRT-PL)表征,揭示ZnO-PSA Ⅱ型纳米异质结光生载流子电荷转移过程,通过甲基橙光降解实验,测得ZnO-NRs和ZnO-PSA紫外光降解率分别为25. 5%和60. 1%,光降解率提高到2. 4倍,表明Ⅱ型异质结相对于单一半导体而言,能促进光生载流子在界面间电荷转移,有利于载流子的分离。

Steady-state and nanosecond time-resolved transient photoluminescence spectra (NTRT-PL) measurements were used to reveal the interfacial charge transfer process of photogenerated carriers for type-II ZnO-PSA nano-heterojunctions. Furthermore, the UV photodegradation rates of methyl orange (MO) for ZnO-NRs and ZnO-PSA heterojunction were 25.5% and 60.1%, respectively, which is improved 2.4 times. It is demonstrated that type-II heterojunction can promote charge transfer between heterointerfaces and facilitate carrier separation compared with single semiconductor.