Ga-Al-As半导体激光对乳牙牙髓中热休克蛋白70表达的影响

Effect of Ga-Al-As semiconductor laser on the expression of heat shock protein 70 in deciduous teeth pulp

目的评估Ga-Al-As半导体激光对乳牙牙髓中热休克蛋白70表达及分布的影响。方法对因乳牙滞留拔除的第一乳磨牙的近中表面使用Ga-Al-As半导体激光照射,分别在7天、14天和21天检测HSP70的免疫组化定位,并借助Image-Pro-Plux软件分析系统测量光密度值并进行统计学分析。结果第7天开始逐步形成修复性牙本质并出现HSP70阳性的成牙本质细胞样细胞,14天达到高峰,21天逐渐消退。结论 Ga-Al-As半导体激光照射乳牙冠髓诱导HSP70表达增强,能形成修复性牙本质。

Objective To evaluate the expression and distribution of heat shock protein 70 in deciduous pulp by Ga-Al-As semiconductor laser.Methods Ga-Al-As semiconductor laser was used to irradiate the mesial surface of the first deciduous molar which were extracted due to their retention.The immunohistochemical localization of HSP70 was respectively detected on 7,14 and 21 days.The optical density was measured and analyzed by Image-Pro-Plux software analysis system.Results On the 7th day,restorative dentin gradually formed and HSP70 positive odontoblast-like cells appeared,peaked at the 14th day and gradually disappeared at the 21st day.Conclusion Ga-Al-As semiconductor laser irradiation can enhance the expression of HSP70 in the crown and pulp of deciduous teeth and form restorative dentin.