高温下4H-SIC α探测器的性能研究

Study on Properties of 4H-SiC Alpha Detector at High Temperature

制成了基于4H碳化硅(4H-SiC)二极管的4H-SIC探测器,研究了室温~200℃下该探测器的IV特性,同时研究了该温度范围内4H-S1C探测器对α粒子的探测性能,获得了该探测器测得的α能谱及其半高宽和能量分辨率随温度变化的规律。探测器的正向电流值随着温度上升而逐渐增大,开启电压逐渐减小;当反向偏压一定时,在温度大于100℃时探测器的漏电流随温度迅速增加。但在温度为200℃和反向偏压为70V的条件下,探测器的漏电流仅为190nA.在室温~200℃范围内,4H-SiC探测器均具备α粒子探测能力。所得能谱的峰值随温度增加而增大,变化幅度相对于峰值小于1%;环境温度为200℃时,探测器的能量分辨率可达1.86%。本研究结果表明,4H-SiCα探测器具有良好的耐高温能力。

We fabricated an alpha detector based on 4H-SiC diode, and investigated its current-voltage characteristics and its performance on detecting alpha from 23 ℃ to 200 ℃.We acquired alpha energy spectrum and characteristics of its FWHM and energy resolution versus temperature. The forward current of the detector increased while temperature increased, and the tum-on voltage decreased simultaneously. The leakage current of the detector increased rapidly above 100℃. at a certain voltage. However, the leakage current of the detector was only 190 nA at 200℃ and -70 V. The 4H-SiC detector can detect alpha from 23℃ to 200℃., and the energy resolution can reach 1.86% at 200℃. and -70 V. These results indicate that the 4H-SiC detector can perform well at high temperature.