摘要
Chemical pressure induced by iso-valent doping has been widely employed to tune physical properties of materials. In this work, we report effects of chemical pressure by substitution of Sb or P into As on a recently discovered diluted magnetic semiconductor(Ba,K)(Zn,Mn)_2 As_2, which has the record of reliable Curie temperature of 230 K due to independent charge and spin doping. Sb and P are substituted into As-site to produce negative and positive chemical pressures, respectively.X-ray diffraction results demonstrate the successful chemical solution of dopants. Magnetic properties of both K-underdoped and K-optimal-doped samples are effectively tuned by Sb-and P-doping. The Hall effect measurements do not show decrease in carrier concentrations upon Sb-and P-doping. Impressively, magnetoresistance is significantly improved from7% to 27% by only 10% P-doping, successfully extending potential application of(Ba,K)(Zn,Mn)_2 As_2.
Chemical pressure induced by iso-valent doping has been widely employed to tune physical properties of materials. In this work, we report effects of chemical pressure by substitution of Sb or P into As on a recently discovered diluted magnetic semiconductor(Ba,K)(Zn,Mn)_2 As_2, which has the record of reliable Curie temperature of 230 K due to independent charge and spin doping. Sb and P are substituted into As-site to produce negative and positive chemical pressures, respectively.X-ray diffraction results demonstrate the successful chemical solution of dopants. Magnetic properties of both K-underdoped and K-optimal-doped samples are effectively tuned by Sb-and P-doping. The Hall effect measurements do not show decrease in carrier concentrations upon Sb-and P-doping. Impressively, magnetoresistance is significantly improved from7% to 27% by only 10% P-doping, successfully extending potential application of(Ba,K)(Zn,Mn)_2 As_2.
基金
Project supported by the National Key R&D Program of China(Grant No.2017YFB0405703)
the Ministry of Science and Technology of China(Grant Nos.2018YFA03057001 and 2015CB921000)
the National Natural Science Foundation of China through the Research Projects(Grant Nos.11534016and 61504166)
