摘要
We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low transmittance.It is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.
We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low transmittance.It is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.51572132,61674082,and 61774089)
the National Key R&D Program of China(Grant No.2018YFB1500202)
Tianjin Natural Science Foundation of Key Project,China(Grant Nos.18JCZDJC31200 and 16JCZDJC30700)
Yang Fan Innovative and Entrepreneurial Research Team Project,China(Grant No.2014YT02N037)
111 Project,China(Grant No.B16027)
the International Cooperation Base,China(Grant No.2016D01025)
