蓝宝石晶片中微/纳米缺陷散射特性的仿真

Simulation of Scattering Characteristics of Micro- and Nano-Scale Defects in Sapphire Wafer

基于广义Lorenz-Mie理论,对蓝宝石晶片中微体缺陷的散射特性进行了仿真,分析了散射光接收位置、缺陷大小、入射光波长对散射光强的影响。结果表明:前向散射方向上的空间散射光强信息量最大,检测结果最准确;缺陷大小对散射光强分布具有显著影响,可以将散射光强分布曲线的特征作为判断缺陷大小的依据;入射光波长越小,测量越准确。

The scattering characteristics simulation of microsphere defects in sapphire wafers is implemented based on the generalized Lorenz-Mie theory,the influences of the receiving position of scattered light,defect size,the wavelength of incident light on the scattering light intensity are analyzed.The results show that the spatial scattering light intensity in the front scattering direction contains the largest amount of information,so the test results are the most accurate.The defect size has significant effect on the scattering light intensity distribution,therefore,it is possible that the characteristics of the scattering light intensity distribution curves can be used as the basis to estimate the defect size.The smaller the wavelength of the incident light,the more accurate the detection results.