面向中高频应用的3300 V IGBT/FRD设计与制造

Design and Manufacturing of 3300 V IGBT/FRD for Medium to High Frequency Applications

为满足中高频大功率市场对绝缘栅双极型晶体管(IGBT)和高速恢复二极管(FRD)芯片的需求,通过对IGBT的元胞结构采用背面集电极发射效率控制和局部少子寿命控制技术,在导电压降少量增加的前提下,使关断损耗下降了30%,从而提高关断速度;对IGBT的终端结构采用新型钝化技术,大幅降低了漏电流,有利于提高开关速度;对FRD采用全局和局部寿命控制技术,降低了高温反向漏电流,同时满足软反向恢复的要求,提高器件的可靠性。在已有量产8英寸IGBT DMOS+技术平台上,设计和制造了满足中高频应用的3300 V IGBT和FRD芯片组。

In order to meet the demand of insulated gate bipolar transistor(IGBT)and fast recovery diode(FRD)chip in medium and high frequency high power market,the backside collector controlled injection efficiency and local minority carrier lifetime control technique are adopted in the cell structure of IGBT,and the turn-off loss is reduced by 30% with a small increase of conductive voltage drop.In order to increase the cut-off speed,the terminal structure of IGBT is passivated by a new passivation technology,which greatly reduces the leakage current and improves the switching speed.The global and local life control technologies are used for FRD,which reduce the high temperature reverse leakage current and meet the requirements of soft reverse recovery and improves the reliability of the device.A 3 300 V IGBT and FRD chipset for medium and high frequency applications are designed and manufactured on the existing 8 inch IGBT DMOS+technology platform.