摘要
为了提高半导体桥(SCB)火工品的静电安全性能,利用肖特基二极管(SBD)对SCB进行静电防护,对防护后的SCB火工品进行静电放电试验研究。研究结果表明:在静电放电条件(25 kV、500 pF、500Ω)下,防护后的SCB火工品的桥区未烧蚀,电阻未发生明显变化,SCB未损伤。对静电试验后的SCB火工品进行电容发火试验研究,研究结果表明:静电试验后的SCB能够正常发火,SCB的爆发时间与发火能量未产生显著性变化,SCB的电爆性能未受到影响。
In order to improve static safety performance of SCB igniters,Schottky Diodes were used to protect SCB from electrostatic discharge.Results of the electrostatic discharge experiment show that the bridge area has not been ablated,the resistance has not changed significantly,and the SCB has not been damaged under electrostatic discharge conditions of 25kV,500pF and 500Ω.The results of the capacitive discharge experiment show that the SCB can ignite normally after the electrostatic experiment.In addition,ignition time and energy of SCB do not change significantly,and the electrical explosion performance of SCB is not affected.
作者
黄亦斌
周彬
王军
HUANG Yibin;ZHOU Bin;WANG Jun(School of Chemical Engineering,Nanjing University of Science and Technology,Jiangsu Nanjing,210094)
出处
《爆破器材》
CAS
北大核心
2019年第3期29-32,共4页
Explosive Materials
关键词
半导体桥
肖特基二极管
静电安全性
semiconductor bridge
Schottky barrier diodes
electrostatic security