“死层”掺杂浓度和厚度对太阳能电池性能的影响

Effects of the doping concentration and depth of “the dead layer” on silicon solar cells

通过金属辅助化学刻蚀及碱修饰方法制备纳米结构多晶硅太阳能电池,按照"死层"模型运用PC1D模拟软件拟合样品的内量子效率曲线。以"死层"掺杂浓度和厚度变化,分析"死层"结构参数对纳米结构多晶硅太阳能电池的内量子效率曲线、开路电压、短路电流和电池效率的影响。研究表明,当掺杂浓度减少到与第2层发射区相同时,拟合电池效率可达18.10%,比样品电池效率提高0.35%;当"死层"厚度变为0时,拟合电池效率可达18.31%,比样品电池效率提高0.56%。

Nanostructured multicrystalline silicon solar cells are fabricated by metal assisted chemical etching and subsequent alkali modification.An internal quantum efficiency (IQE) curve is simulated by the PC1D software according to “the dead layer” model.The effects of the doping concentration and depth of “the dead layer” on the simulated IQE curve,the open circuit voltage,the short circuit current and the efficiency are studied. When the doping concentration is reduced to the same value as that of the second front diffusion emitter,the simulated efficiency is 18.10%,which is 0.35% higher than the sample;when “the dead layer” depth is reduced to zero,the simulated efficiency is 18.31%,which is 0.56% higher than the sample.