Cu_2ZnSn(SSe)_4薄膜的制备及其性能研究

Synthesis and properties of Cu_2ZnSn(SSe)_4 thin films

通过不同液相前驱体合成了Cu_2ZnSn(SSe)_4(CZTSSe)薄膜,采用XRD、SEM等手段进行表征,结果表明,前驱体中Zn源的活性直接影响到最终生成CZTSSe晶体材料的性能;通过肼、S粉和Zn粉提供的Zn源不容易形成晶核,发生反应所需反应温度较高,但是容易形成大的晶型,制备的CZTSSe晶体能量转化率为6.21%;而通过干冰、N_2H_4和Zn粉提供的Zn源容易形成晶核,但其后续晶体长大的反应进行比较困难,不容易形成大的晶型,制备的CZTSSe晶体能量转化率只有5.50%。揭示了不同Zn前驱体对CZTSSe薄膜结构、晶体尺寸以及转化率的影响,并对机理进行了初步探讨。

Cu 2ZnSn (SSe) 4 (CZTSSe) thin films were synthesized by different liquid phase precursors. The results showed that the activity of Zn source in the precursors directly affects the properties of CZTSSe crystal materials. It was found by X-ray diffraction and scanning electron microscope that the zinc source provided by hydrazine,S powder and zinc powder was not easy to form nuclei,and the reaction temperature was higher,but it was easy to form large crystals. The energy conversion rate of CZTSSe crystal was 6.21%. The zinc source provided by dry ice,N 2H 4 and zinc powder was easy to form nuclei,but the subsequent reaction of crystal growth was difficult and not easy. The energy conversion of CZTSSe crystal was only 5.50%. The effects of different Zn precursors on the structure,crystal size and conversion of CZTSSe thin films were revealed,and the mechanism was preliminarily discussed.